PEMD13,115 datasheet

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Маркировка

PEMD13,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PEMD13,115 Collector- Emitter Voltage Vceo Max: 50 V Collector-emitter Voltage: 50V Configuration: Dual Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1?µA Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 5V Dc Current Gain (min): 100 Frequency - Transition: - ID_COMPONENTS: 1947831 Lead Free Status / Rohs Status: Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Operating Temperature Classification: Military Package / Case: SS Mini-6 (SOT-666) Package Type: SOT-666 Peak Dc Collector Current: 100 mA Pin Count: 6 Power - Max: 300mW Resistor - Base (r1) (ohms): 4.7K Resistor - Emitter Base (r2) (ohms): 47K Transistor Polarity: NPN/PNP Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Typical Input Resistor: 4.7 KOhm Typical Resistor Ratio: 0.1 Vce Saturation (max) @ Ib, Ic: 100mV @ 250?µA, 5mA Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Switching - Resistor Biased RoHS: yes Collector- Emitter Voltage VCEO Max: 50 V Peak DC Collector Current: 100 mA Factory Pack Quantity: 4000 Part # Aliases: PEMD13 T/R Other Names: 934056866115, PEMD13 T/R
Количество страниц

8 шт.
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